155 µm high speed low chirp electroabsorption modulated laser arrays based on SAG scheme

We demonstrate a cost-effective 1.55 µm low chirp 4 × 25 Gbit/s electroabsorption modulated laser (EML) array with 0.8 nm channel spacing by varying ridge width of the lasers and using selective area growth (SAG) integration scheme. The devices for all the 4 channels within the EML array show uniform threshold currents around 18 mA and high SMSRs over 45 dB. The output optical power of each channel is about 9 mW at an injection current of 100 mA. The typical chirp value of single EML measured by a fiber resonance method varied from 2.2 to -4 as the bias voltage was increased from 0 V to 2.5 V. These results show that the EML array is a suitable light source for 100 Gbit/s optical transmissions.