High-efficiency Si optical modulator using Cu travelling-wave electrode | Zendy

Yan Yang | Zendy; Qing Fang | Zendy; Mingbin Yu | Zendy; Xiaoguang Tu | Zendy; Rusli Rusli | Zendy; GuoQiang Lo | Zendy

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High-efficiency Si optical modulator using Cu travelling-wave electrode

Author(s) -

Yan Yang,

Qing Fang,

Mingbin Yu,

Xiaoguang Tu,

Rusli Rusli,

GuoQiang Lo

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.029978

Subject(s) - extinction ratio , materials science , optoelectronics , silicon photonics , silicon on insulator , optics , mach–zehnder interferometer , cmos , phase modulation , electro optic modulator , interferometry , photonics , optical modulator , wafer , bandwidth (computing) , silicon , telecommunications , physics , phase noise , wavelength , computer science

We demonstrate a high-efficiency and CMOS-compatible silicon Mach-Zehnder Interferometer (MZI) optical modulator with Cu traveling-wave electrode and doping compensation. The measured electro-optic bandwidth at Vbias = -5 V is above 30 GHz when it is operated at 1550 nm. At a data rate of 50 Gbps, the dynamic extinction ratio is more than 7 dB. The phase shifter is composed of a 3 mm-long reverse-biased PN junction with modulation efficiency (Vπ·Lπ) of ~18.5 V·mm. Such a Cu-photonics technology provides an attractive potentiality for integration development of silicon photonics and CMOS circuits on SOI wafer in the future.

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