Assessment of crystal quality and unit cell orientation in epitaxial Cu_2ZnSnSe_4 layers using polarized Raman scattering | Zendy

Christoph Krämmer | Zendy; Mario Lang | Zendy; Alex Redinger | Zendy; Johannes Sachs | Zendy; Chao Gao | Zendy; H. Kalt | Zendy; Susanne Siebentritt | Zendy; M. Hetterich | Zendy

Open Access

Assessment of crystal quality and unit cell orientation in epitaxial Cu_2ZnSnSe_4 layers using polarized Raman scattering

Author(s) -

Christoph Krämmer,

Mario Lang,

Alex Redinger,

Johannes Sachs,

Chao Gao,

H. Kalt,

Susanne Siebentritt,

M. Hetterich

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.028240

Subject(s) - kesterite , raman spectroscopy , materials science , epitaxy , optics , perpendicular , raman scattering , crystallite , crystal (programming language) , optoelectronics , solar cell , physics , nanotechnology , geometry , mathematics , layer (electronics) , computer science , czts , metallurgy , programming language

We use polarization-resolved Raman spectroscopy to assess the crystal quality of epitaxial kesterite layers. It is demonstrated for the example of epitaxial Cu₂ZnSnSe₄ layers on GaAs(001) that "standing" and "lying" kesterite unit cell orientations (c'-axis parallel / perpendicular to the growth direction) can be distinguished by the application of Raman tensor analysis. From the appearance of characteristic intensity oscillations when the sample is rotated one can distinguish polycrystalline and epitaxial layers. The method can be transferred to kesterite layers oriented in any crystal direction and can shed light on the growth of such layers in general.

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