Roles of epsilon-near-zero (ENZ) and mu-near-zero (MNZ) materials in optical metatronic circuit networks

The concept of metamaterial-inspired nanocircuits, dubbed metatronics, was introduced in [Science 317, 1698 (2007); Phys. Rev. Lett. 95, 095504 (2005)]. It was suggested how optical lumped elements (nanoelements) can be made using subwavelength plasmonic or non-plasmonic particles. As a result, the optical metatronic equivalents of a number of electronic circuits, such as frequency mixers and filters, were suggested. In this work we further expand the concept of electronic lumped element networks into optical metatronic circuits and suggest a conceptual model applicable to various metatronic passive networks. In particular, we differentiate between the series and parallel networks using epsilon-near-zero (ENZ) and mu-near-zero (MNZ) materials. We employ layered structures with subwavelength thicknesses for the nanoelements as the building blocks of collections of metatronic networks. Furthermore, we explore how by choosing the non-zero constitutive parameters of the materials with specific dispersions, either Drude or Lorentzian dispersion with suitable parameters, capacitive and inductive responses can be achieved in both series and parallel networks. Next, we proceed with the one-to-one analogy between electronic circuits and optical metatronic filter layered networks and justify our analogies by comparing the frequency response of the two paradigms. Finally, we examine the material dispersion of near-zero relative permittivity as well as other physically important material considerations such as losses.