Two-dimensional photo-mapping on CMOS single-photon avalanche diodes | Zendy

Jau-Yang Wu | Zendy; Ping-Keng Lu | Zendy; ShengDi Lin | Zendy

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Two-dimensional photo-mapping on CMOS single-photon avalanche diodes

Author(s) -

Jau-Yang Wu,

Ping-Keng Lu,

ShengDi Lin

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.016462

Subject(s) - electric field , diode , optics , optoelectronics , photon , single photon avalanche diode , avalanche photodiode , avalanche diode , wavelength , cmos , physics , materials science , detector , voltage , breakdown voltage , quantum mechanics

Two-dimensional (2-D) photo-count mapping on CMOS single photon avalanche diodes (SPADs) has been demonstrated. Together with the varied incident wavelengths, the depth-dependent electric field distribution in active region has been investigated on two SPADs with different structures. Clear but different non-uniformity of photo-response have been observed for the two studied devices. With the help of simulation tool, the non-uniform photo-counts arising from the electric field non-uniformity have been well explained. As the quasi-3D distribution of electric field in the active region can be mapped, our method is useful for engineering the device structure to improve the photo-response of SPADs.

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