A high-responsivity photodetector absent metal-germanium direct contact | Zendy

Yi Zhang | Zendy; Shuyu Yang | Zendy; Yisu Yang | Zendy; Michael N. Gould | Zendy; Noam Ophir | Zendy; Andy Eu-Jin Lim | Zendy; GuoQiang Lo | Zendy; Peter Magill | Zendy; Keren Bergman | Zendy; Tom BaehrJones | Zendy; Michael Hochberg | Zendy

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A high-responsivity photodetector absent metal-germanium direct contact

Author(s) -

Yi Zhang,

Shuyu Yang,

Yisu Yang,

Michael N. Gould,

Noam Ophir,

Andy Eu-Jin Lim,

GuoQiang Lo,

Peter Magill,

Keren Bergman,

Tom BaehrJones,

Michael Hochberg

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.011367

Subject(s) - responsivity , photodetector , germanium , materials science , optics , dark current , optoelectronics , wavelength , fabrication , reverse bias , silicon , physics , medicine , alternative medicine , pathology , diode

We report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the simplified fabrication process, the device shows a responsivity of 1.14 A/W at -4 V reverse bias and 1.44 A/W at -12V, at 1550 nm wavelength. Dark current is less than 1µA under both bias conditions. We also demonstrate open eye diagrams at 40Gb/s.

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