Optical properties associated with strain relaxations in thick InGaN epitaxial films | Zendy

Wen-Che Tsai | Zendy; Chia-He Hsu | Zendy; Shao-Fu Fu | Zendy; Fang-Wei Lee | Zendy; ChinYu Chen | Zendy; WuChing Chou | Zendy; WeiKuo Chen | Zendy; WenHao Chang | Zendy

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Optical properties associated with strain relaxations in thick InGaN epitaxial films

Author(s) -

Wen-Che Tsai,

Chia-He Hsu,

Shao-Fu Fu,

Fang-Wei Lee,

ChinYu Chen,

WuChing Chou,

WeiKuo Chen,

WenHao Chang

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.00a416

Subject(s) - materials science , reciprocal lattice , photoluminescence , epitaxy , strain (injury) , phase (matter) , optics , optoelectronics , relaxation (psychology) , diffraction , composite material , medicine , psychology , social psychology , chemistry , physics , organic chemistry , layer (electronics)

Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution x-ray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature-dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed.

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