GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer | Zendy

WeiChih Lai | Zendy; Chih-Nan Lin | Zendy; Yi-Chun Lai | Zendy; Peichen Yu | Zendy; Gou Chung | Zendy; ShoouJinn Chang | Zendy

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GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

Author(s) -

WeiChih Lai,

Chih-Nan Lin,

Yi-Chun Lai,

Peichen Yu,

Gou Chung,

ShoouJinn Chang

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.00a396

Subject(s) - materials science , graphene , light emitting diode , indium tin oxide , optoelectronics , ohmic contact , annealing (glass) , gallium nitride , diode , contact resistance , oxide , sheet resistance , indium , wide bandgap semiconductor , layer (electronics) , nanotechnology , composite material , metallurgy

We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm²) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

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