High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases | Zendy

Van-Truong Dai | Zendy; ShengDi Lin | Zendy; Shih-Wei Lin | Zendy; Yi-Shan Lee | Zendy; Yinjie Zhang | Zendy; Liang-Chen Li | Zendy; Chien-Ping Lee | Zendy

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High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

Author(s) -

Van-Truong Dai,

ShengDi Lin,

Shih-Wei Lin,

Yi-Shan Lee,

Yinjie Zhang,

Liang-Chen Li,

Chien-Ping Lee

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.003811

Subject(s) - electroluminescence , planar , materials science , optoelectronics , diode , optics , light emitting diode , lithography , electron beam lithography , electron , quantum well , physics , resist , nanotechnology , laser , computer graphics (images) , layer (electronics) , quantum mechanics , computer science

A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, two-dimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.

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