Suspended GaN-based band-edge type photonic crystal nanobeam cavities | Zendy

Tzeng Tsong Wu | Zendy; Hao Chen | Zendy; Yu-Pin Lan | Zendy; TienChang Lu | Zendy; Shing-Chung Wang | Zendy

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Suspended GaN-based band-edge type photonic crystal nanobeam cavities

Author(s) -

Tzeng Tsong Wu,

Hao Chen,

Yu-Pin Lan,

TienChang Lu,

Shing-Chung Wang

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.002317

Subject(s) - materials science , photonic crystal , electron beam lithography , optics , focused ion beam , q factor , lithography , polarization (electrochemistry) , optoelectronics , beam (structure) , enhanced data rates for gsm evolution , ion , resist , resonator , physics , nanotechnology , chemistry , layer (electronics) , quantum mechanics , telecommunications , computer science

We demonstrated GaN-based photonic crystal (PC) nanobeam cavities by using the e-beam lithography and the suspended nanobeams were realized by focused-ion beam (FIB) milling. One resonant mode was clearly observed at 411.7 nm at 77K by optical pumping. The quality factor was measured to be to 7.4 × 10(2). Moreover, the degree of polarization value was measured to be 40%. The temperature-dependent characteristics were measured and discussed, which unambiguously demonstrated that the observed resonant peak originated from the band-edge mode of the one-dimensional PC nanobeam.

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