Open AccessHole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
Author(s) -
Bingchen Lin,
Kuo-Ju Chen,
Chao-Hsun Wang,
Ching-Hsueh Chiu,
Yu-Pin Lan,
ChienChung Lin,
Po-Tsung Lee,
MinHsiung Shih,
YenKuang Kuo,
HaoChung Kuo
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.000463
Subject(s) - materials science , optoelectronics , diode , light emitting diode , chemical vapor deposition , voltage droop , wide bandgap semiconductor , layer (electronics) , electron , blocking (statistics) , optics , gallium nitride , voltage , nanotechnology , physics , statistics , mathematics , quantum mechanics , voltage divider
A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.
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