Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm | Zendy

Matthew Streshinsky | Zendy; Ran Ding | Zendy; Yang Liu | Zendy; Ari Novack | Zendy; Yisu Yang | Zendy; Yangjin Ma | Zendy; Xiaoguang Tu | Zendy; Edward Koh Sing Chee | Zendy; Andy Eu-Jin Lim | Zendy; Patrick Lo | Zendy; Tom BaehrJones | Zendy; Michael Hochberg | Zendy

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Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm

Author(s) -

Matthew Streshinsky,

Ran Ding,

Yang Liu,

Ari Novack,

Yisu Yang,

Yangjin Ma,

Xiaoguang Tu,

Edward Koh Sing Chee,

Andy Eu-Jin Lim,

Patrick Lo,

Tom BaehrJones,

Michael Hochberg

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.030350

Subject(s) - optics , electro optic modulator , modulation (music) , silicon , physics , power (physics) , wavelength , optoelectronics , materials science , optical modulator , phase modulation , quantum mechanics , phase noise , acoustics

The wavelength band near 1300 nm is attractive for many telecommunications applications, yet there are few results in silicon that demonstrate high-speed modulation in this band. We present the first silicon modulator to operate at 50 Gbps near 1300 nm. We demonstrate an open eye at this speed using a differential 1.5 V(pp) signal at 0 V reverse bias, achieving an energy efficiency of 450 fJ/bit.

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