Kilometer-range depth imaging at 1550 nm wavelength using an InGaAs/InP single-photon avalanche diode detector
Author(s) -
Aongus McCarthy,
Ximing Ren,
Adriano Della Frera,
Nathan R. Gemmell,
Nils J. Krichel,
Carmelo Scarcella,
Alessandro Ruggeri,
Alberto Tosi,
Gerald S. Buller
Publication year - 2013
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.21.022098
Subject(s) - optics , detector , indium gallium arsenide , thermoelectric cooling , wavelength , optoelectronics , materials science , avalanche photodiode , diode , avalanche diode , laser , photon counting , image resolution , physics , thermoelectric effect , breakdown voltage , quantum mechanics , voltage , thermodynamics
We have used an InGaAs/InP single-photon avalanche diode detector module in conjunction with a time-of-flight depth imager operating at a wavelength of 1550 nm, to acquire centimeter resolution depth images of low signature objects at stand-off distances of up to one kilometer. The scenes of interest were scanned by the transceiver system using pulsed laser illumination with an average optical power of less than 600 µW and per-pixel acquisition times of between 0.5 ms and 20 ms. The fiber-pigtailed InGaAs/InP detector was Peltier-cooled and operated at a temperature of 230 K. This detector was used in electrically gated mode with a single-photon detection efficiency of about 26% at a dark count rate of 16 kilocounts per second. The system's overall instrumental temporal response was 144 ps full width at half maximum. Measurements made in daylight on a number of target types at ranges of 325 m, 910 m, and 4.5 km are presented, along with an analysis of the depth resolution achieved.
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