Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes | Zendy

Zhiwen Lu | Zendy; Wenlu Sun | Zendy; Qiugui Zhou | Zendy; Joe C. Campbell | Zendy; Xudong Jiang | Zendy; Mark A. Itzler | Zendy

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Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes

Author(s) -

Zhiwen Lu,

Wenlu Sun,

Qiugui Zhou,

Joe C. Campbell,

Xudong Jiang,

Mark A. Itzler

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.016716

Subject(s) - diode , optics , optoelectronics , avalanche photodiode , single photon avalanche diode , gating , materials science , photon counting , gallium arsenide , laser , apds , avalanche diode , indium gallium arsenide , photon , photodetector , detector , physics , voltage , physiology , breakdown voltage , quantum mechanics , biology

We report balanced InGaAs/InP single photon avalanche diodes (SPADs) operated in sinusoidal gating mode with a tunable phase shifter to reduce common mode noise. This technique enables detection of small avalanche pulses, which results in reduced afterpulsing. For laser repletion rate of 20 MHz at 240 K, the dark count rate for photon detection efficiency of 10% is 8.9 kHz.

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