Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer | Zendy

YongSeok Choi | Zendy; JangWon Kang | Zendy; Byeong-Hyeok Kim | Zendy; Dong-Keun Na | Zendy; Sangjun Lee | Zendy; Seong-Ju Park | Zendy

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Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer

Author(s) -

YongSeok Choi,

JangWon Kang,

Byeong-Hyeok Kim,

Dong-Keun Na,

Sangjun Lee,

Seong-Ju Park

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.011698

Subject(s) - electroluminescence , light emitting diode , materials science , optoelectronics , diode , layer (electronics) , ultraviolet , wide bandgap semiconductor , electron , optics , nanotechnology , physics , quantum mechanics

We report on the effect of a p-type MgZnO electron blocking layer (EBL) on the electroluminescence from n-type ZnO/undoped ZnO/p-type ZnO light-emitting diodes (LEDs). The p-type Mg(0.1)Zn(0.9)O EBL was introduced between the undoped and p-type ZnO layers. The p-type Mg(0.1)Zn(0.9)O EBL increased the ultraviolet emission by 140% at 60 mA and decreased the broad deep-level emission from ZnO LEDs. The calculated band structures and carrier distribution in ZnO LEDs show that p-type Mg(0.1)Zn(0.9)O EBL effectively suppresses the electron overflow from undoped ZnO to p-type ZnO and increases the hole concentration in the undoped ZnO layer.

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