Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells | Zendy

G. W. Shu | Zendy; Jing Lin | Zendy; He Jian | Zendy; JiLin Shen | Zendy; S. C. Wang | Zendy; ChiaLing Chou | Zendy; W. C. Chou | Zendy; C.H. Wu | Zendy; ChunHung Chiu | Zendy; HaoChung Kuo | Zendy

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Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells

Author(s) -

G. W. Shu,

Jing Lin,

He Jian,

JiLin Shen,

S. C. Wang,

ChiaLing Chou,

W. C. Chou,

C.H. Wu,

ChunHung Chiu,

HaoChung Kuo

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.00a123

Subject(s) - materials science , electroluminescence , optoelectronics , diode , band gap , optics , triple junction , gallium arsenide , coupling (piping) , infrared , layer (electronics) , nanotechnology , physics , metallurgy

Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.

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