High-power flip-chip mounted photodiode array | Zendy

A. Cross | Zendy; Qiugui Zhou | Zendy; Andréas Beling | Zendy; Yang Fu | Zendy; Joe C. Campbell | Zendy

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High-power flip-chip mounted photodiode array

Author(s) -

A. Cross,

Qiugui Zhou,

Andréas Beling,

Yang Fu,

Joe C. Campbell

Publication year - 2013

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.21.009967

Subject(s) - photodiode , flip chip , materials science , optics , optoelectronics , dbm , chip , detector , dissipation , power (physics) , physics , cmos , electrical engineering , amplifier , adhesive , layer (electronics) , quantum mechanics , composite material , thermodynamics , engineering

Four-element modified uni-traveling-carrier (MUTC) photodiode arrays (PDA) flip-chip bonded onto transmission lines on AlN substrates are demonstrated. High RF output powers of 26.2 dBm and 21.0 dBm are achieved at 35 GHz and 48 GHz, respectively, using a PDA with 28-μm diameter photodiodes. A systematic comparison between a PDA with four 20 μm-diameter elements and a discrete detector with the same active area (40-μm diameter) is presented. The PDA achieved higher output power and thermal dissipation compared to its discrete counterpart.

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