Sub-wavelength temperature probing in near-field laser heating by particles

This work reports on the first time experimental investigation of temperature field inside silicon substrates under particle-induced near-field focusing at a sub-wavelength resolution. The noncontact Raman thermometry technique employing both Raman shift and full width at half maximum (FWHM) methods is employed to investigate the temperature rise in silicon beneath silica particles. Silica particles of three diameters (400, 800 and 1210 nm), each under four laser energy fluxes of 2.5 × 10(8), 3.8 ×10(8), 6.9 ×10(8) and 8.6 ×10(8) W/m(2), are used to investigate the effects of particle size and laser energy flux. The experimental results indicate that as the particle size or the laser energy flux increases, the temperature rise inside the substrate goes higher. Maximum temperature rises of 55.8 K (based on Raman FWHM method) and 29.3K (based on Raman shift method) are observed inside the silicon under particles of 1210 nm diameter with an incident laser of 8.6 × 10(8) W/m(2). The difference is largely due to the stress inside the silicon caused by the laser heating. To explore the mechanism of heating at the sub-wavelength scale, high-fidelity simulations are conducted on the enhanced electric and temperature fields. Modeling results agree with experiment qualitatively, and discussions are provided about the reasons for their discrepancy.