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A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.

Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 13 μm transmission