Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO_2 nanoparticles | Zendy

LeeWoon Jang | Zendy; DaeWoo Jeon | Zendy; Trilochan Sahoo | Zendy; Dong-Seob Jo | Zendy; Jin-Woo Ju | Zendy; Seung-Jae Lee | Zendy; JongHyeob Baek | Zendy; JinKyu Yang | Zendy; Jung-Hoon Song | Zendy; A. Y. Polyakov | Zendy; InHwan Lee | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO_2 nanoparticles

Author(s) -

LeeWoon Jang,

DaeWoo Jeon,

Trilochan Sahoo,

Dong-Seob Jo,

Jin-Woo Ju,

Seung-Jae Lee,

JongHyeob Baek,

JinKyu Yang,

Jung-Hoon Song,

A. Y. Polyakov,

InHwan Lee

Publication year - 2012

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.20.002116

Subject(s) - photoluminescence , materials science , surface plasmon , optoelectronics , electric field , plasmon , absorption (acoustics) , nanoparticle , quantum well , relaxation (psychology) , optics , nanotechnology , laser , psychology , social psychology , physics , quantum mechanics , composite material

Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time-resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research