CMOS buried Quad p-n junction photodetector for multi-wavelength analysis
Author(s) -
Charles Richard,
Thierry Courcier,
Patrick Pittet,
Stéphane Martel,
L. Ouellet,
GuoNeng Lu,
Vincent Aimez,
Paul G. Charette
Publication year - 2012
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.20.002053
Subject(s) - photodetector , optoelectronics , materials science , optics , chip , light emitting diode , photonics , spectrometer , cmos , photodiode , wavelength , physics , computer science , telecommunications
This paper presents a buried quad p-n junction (BQJ) photodetector fabricated with a HV (high-voltage) CMOS process. Multiple buried junction photodetectors are wavelength-sensitive devices developed for spectral analysis applications where a compact integrated solution is preferred over systems involving bulk optics or a spectrometer due to physical size limitations. The BQJ device presented here is designed for chip-based biochemical analyses using simultaneous fluorescence labeling of multiple analytes such as with advanced labs-on-chip or miniaturized photonics-based biosensors. Modeling and experimental measurements of the spectral response of the device are presented. A matrix-based method for estimating individual spectral components in a compound spectrum is described. The device and analysis method are validated via a test setup using individually modulated LEDs to simulate light from 4-component fluorescence emission.
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