Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection | Zendy

Fengwen Huang | Zendy; JinnKong Sheu | Zendy; Ming-Lun Lee | Zendy; Shang-Ju Tu | Zendy; WeiChih Lai | Zendy; Wen-Che Tsai | Zendy; WenHao Chang | Zendy

Open Access

Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection

Author(s) -

Fengwen Huang,

JinnKong Sheu,

Ming-Lun Lee,

Shang-Ju Tu,

WeiChih Lai,

Wen-Che Tsai,

WenHao Chang

Publication year - 2011

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.19.0a1211

Subject(s) - photodetection , materials science , optoelectronics , photoluminescence , heterojunction , photon , absorption (acoustics) , doping , wide bandgap semiconductor , quantum efficiency , quantum well , chemical vapor deposition , photon energy , luminescence , optics , photodetector , physics , laser , composite material

Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vapor-phase epitaxy are demonstrated. The up-converters exhibit a significant up-converted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of ~450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model.

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