Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers | Zendy

HsinChu Chen | Zendy; ChienChung Lin | Zendy; Hao-Wei Han | Zendy; Yu-Lin Tsai | Zendy; Chia-Hua Chang | Zendy; Hsun-Wen Wang | Zendy; Min-An Tsai | Zendy; HaoChung Kuo | Zendy; Peichen Yu | Zendy

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Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers

Author(s) -

HsinChu Chen,

ChienChung Lin,

Hao-Wei Han,

Yu-Lin Tsai,

Chia-Hua Chang,

Hsun-Wen Wang,

Min-An Tsai,

HaoChung Kuo,

Peichen Yu

Publication year - 2011

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.19.0a1141

Subject(s) - nanopillar , materials science , quantum dot , optoelectronics , quantum efficiency , energy conversion efficiency , absorbance , photoluminescence , solar cell , etching (microfabrication) , silicon , optics , nanotechnology , nanostructure , layer (electronics) , physics

The enhanced efficiency of the crystalline silicon (c-Si) solar cell with nanopillar arrays (NPAs) was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by the colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency of the device was measured and analyzed. It is noteworthy that the enhancement of efficiency could be attributed to the photon down-conversion, the antireflection, and the improved electrical property.

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