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We propose an approach for tuning a gain spectrum of semiconductor lasers under temperature fluctuations, where the heat-induced effect is dynamically compensated using a mechanical stressing. By stressing GaAs/Ge/Si microbeams, emission wavelength tuning is experimentally demonstrated for the overlying GaAs layers as a proof-of-concept, and the results are followed by theoretical calculations. It is discussed that this approach is effective to cancel the gain spectrum shift and will be indispensable to the integration of light sources toward WDM systems on a chip.

Emission wavelength tuning by mechanical stressing of GaAs/Ge/Si microbeams