Open AccessFrequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses
Author(s) -
André Müller,
Ole Bjarlin Jensen,
Angelika Unterhuber,
T. Le,
A. Stingl,
KarlHeinz Hasler,
Bernd Sumpf,
G. Erbert,
Peter E. Andersen,
Paul Michael Petersen
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.012156
Subject(s) - materials science , ti:sapphire laser , laser , optics , sapphire , optoelectronics , laser pumping , full width at half maximum , diode , diode pumped solid state laser , laser power scaling , laser diode , semiconductor laser theory , physics
For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.
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