High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode | Zendy

Zhi Li | Zendy; Yang Fu | Zendy; Molly Piels | Zendy; Huapu Pan | Zendy; Andréas Beling | Zendy; John E. Bowers | Zendy; Joe C. Campbell | Zendy

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High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

Author(s) -

Zhi Li,

Yang Fu,

Molly Piels,

Huapu Pan,

Andréas Beling,

John E. Bowers,

Joe C. Campbell

Publication year - 2011

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.19.00b385

Subject(s) - photodiode , responsivity , photocurrent , materials science , optoelectronics , optics , saturation current , flip chip , linearity , dbm , bandwidth (computing) , photodetector , physics , cmos , voltage , telecommunications , amplifier , adhesive , layer (electronics) , quantum mechanics , computer science , composite material

We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.

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