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High quality factor etchless silicon photonic ring resonators
Author(s) -
Lian-Wee Luo,
Gustavo S. Wiederhecker,
Jaime Cárdenas,
Carl B. Poitras,
Michal Lipson
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.006284
Subject(s) - resonator , silicon , materials science , etching (microfabrication) , optics , q factor , optoelectronics , hybrid silicon laser , silicon photonics , photonics , fabrication , radius , ring (chemistry) , layer (electronics) , physics , nanotechnology , chemistry , computer security , organic chemistry , computer science , medicine , alternative medicine , pathology
We demonstrate high quality factor etchless silicon photonic ring resonators fabricated by selective thermal oxidation of silicon without the silicon layer being exposed to any plasma etching throughout the fabrication process. We achieve a high intrinsic quality factor of 510,000 in 50 µm-radius ring resonators, corresponding to a ring loss of 0.8 dB/cm. The device has a total chip insertion loss of 2.5 dB, achieved by designing etchless silicon inverse nanotapers at both the input and output of the chip.

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