Structure and luminescence evolution of annealed Europium-doped silicon oxides films | Zendy

Dongsheng Li | Zendy; Xuwu Zhang | Zendy; Lu Jin | Zendy; Deren Yang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Structure and luminescence evolution of annealed Europium-doped silicon oxides films

Author(s) -

Dongsheng Li,

Xuwu Zhang,

Lu Jin,

Deren Yang

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.027191

Subject(s) - europium , luminescence , materials science , photoluminescence , silicon , x ray photoelectron spectroscopy , analytical chemistry (journal) , doping , annealing (glass) , electron beam physical vapor deposition , transmission electron microscopy , thin film , silicon oxide , nanotechnology , optoelectronics , chemical engineering , chemistry , metallurgy , chromatography , engineering , silicon nitride

Europium (Eu)-doped silicon oxide films with Eu concentrations from 2.1 to 4.7 at. % were deposited by electron beam evaporation. The Eu related luminescence from the films was found to be sensitive to the evolution of film microstructures at different annealing temperatures. Luminescence centers in the films changed from defects of silicon oxides to 4f(6)5d-4f(7)(8S(7/2)) transition of Eu2+ after the films annealed in N2 at temperature higher than 800 °C. The evolution of luminescence centers was attributed to the formation of europium silicate (EuSiO3), which was confirmed by x-ray photoelectron spectroscopy, x-ray diffraction, time resolved photoluminescence, and transmission electron microscopy.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research