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Defects are one of the most important factors influencing the optical properties of groups III-V nitride semiconductor materials and thereby their applicability to light-emitting diodes. In this paper, we demonstrate that it is possible to estimate the presence of defects in InGaN laser diodes by performing pump-probe measurements and observing the induced absorptions. We have confirmed that the induced absorption originates from defects by performing experiments in which the pump intensity is varied. We believe that our method provides a powerful tool for evaluating the optical quality of InGaN materials before processing them into device fabrications.

Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers