Femtosecond laser induced surface nanostructuring and simultaneous crystallization of amorphous thin silicon film | Zendy

X. C. Wang | Zendy; Hongyu Zheng | Zendy; C. W. Tan | Zendy; Fangying Wang | Zendy; H.Y. Yu | Zendy; K. L. Pey | Zendy

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Femtosecond laser induced surface nanostructuring and simultaneous crystallization of amorphous thin silicon film

Author(s) -

X. C. Wang,

Hongyu Zheng,

C. W. Tan,

Fangying Wang,

H.Y. Yu,

K. L. Pey

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.019379

Subject(s) - materials science , thin film , amorphous solid , optics , laser , femtosecond , silicon , amorphous silicon , optoelectronics , irradiation , crystallization , raman spectroscopy , substrate (aquarium) , crystalline silicon , nanotechnology , chemistry , physics , oceanography , organic chemistry , geology , nuclear physics

Ultrafast pulsed laser irradiation is demonstrated to be able to produce surface nano-structuring and simultaneous crystallization of amorphous silicon thin film in one step laser processing. After fs laser irradiation on 80 nm-thick a-Si deposited on Corning 1737 glass substrate, the color change from light yellow to dark brown was observed on the sample surface. AFM images show that the surface nano-spike pattern was produced on amorphous-Si:H film by fs laser irradiation. Furthermore, micro-Raman results indicate that the a-Si has been crystallized into nanocrystalline Si. Also, the absorptance of the fs laser treated Si thin film was found to increase in the spectrum range of below bandgap compared to original untreated a-Si. The developed process has a potential application in fabrication of high efficiency Si thin film solar cells.

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