High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters | Zendy

SunKyung Kim | Zendy; JinWook Lee | Zendy; HoSeok Ee | Zendy; YongTae Moon | Zendy; Soon-Hong Kwon | Zendy; Ho-Ki Kwon | Zendy; HongGyu Park | Zendy

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High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

Author(s) -

SunKyung Kim,

JinWook Lee,

HoSeok Ee,

YongTae Moon,

Soon-Hong Kwon,

Ho-Ki Kwon,

HongGyu Park

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.011025

Subject(s) - materials science , common emitter , optoelectronics , optics , light emitting diode , diode , slab , interference (communication) , thermophotovoltaic , gallium nitride , quantum efficiency , absorption (acoustics) , layer (electronics) , physics , channel (broadcasting) , geophysics , electrical engineering , engineering , composite material

We demonstrate a highly-efficient, large-area (1x1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased approximately 1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

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