Room temperature detection of sub-terahertz radiation in double-grating-gate transistors | Zendy

Dominique Coquillat | Zendy; S. Nadar | Zendy; F. Teppe | Zendy; N. Dyakonova | Zendy; S. Boubanga-Tombet | Zendy; W. Knap | Zendy; T. Nishimura | Zendy; Taiichi Otsuji | Zendy; Y. M. Meziani | Zendy; G. M. Tsymbalov | Zendy; V. V. Popov | Zendy

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Room temperature detection of sub-terahertz radiation in double-grating-gate transistors

Author(s) -

Dominique Coquillat,

S. Nadar,

F. Teppe,

N. Dyakonova,

S. Boubanga-Tombet,

W. Knap,

T. Nishimura,

Taiichi Otsuji,

Y. M. Meziani,

G. M. Tsymbalov,

V. V. Popov

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.006024

Subject(s) - terahertz radiation , grating , electric field , optoelectronics , optics , materials science , excited state , terahertz spectroscopy and technology , gallium arsenide , radiation , physics , atomic physics , quantum mechanics

Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.

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