Measurement of intermodulation distortion in high-linearity photodiodes
Author(s) -
Anand Ramaswamy,
Nobuhiro Nunoya,
Keith J. Williams,
Jonathan Klamkin,
Molly Piels,
Leif A. Johansson,
Alexander S. Hastings,
L.A. Coldren,
John E. Bowers
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.002317
Subject(s) - intermodulation , photodiode , linearity , optics , distortion (music) , photodetector , optoelectronics , materials science , silicon on insulator , physics , silicon , amplifier , cmos , quantum mechanics
Accurately characterizing third order intermodulation distortion (IMD3) in high-linearity photodiodes is challenging. Two measurement techniques are evaluated-a standard two-tone measurement and a more complicated three-tone measurement technique to measure IMD3. A model of the measurement system is developed and used to analyze the limitations of the two techniques in determining the distortion of highly linear photodiodes. Experimental validation is provided by comparing the simulation trends with IMD3 results measured on two types of waveguide photodiodes: 1) an InP based uni-traveling-carrier (UTC) photodiode and 2) a Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate.
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