Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO_2 | Zendy

ChuYoung Cho | Zendy; Jin-Bock Lee | Zendy; SangJun Lee | Zendy; Sangheon Han | Zendy; TaeYoung Park | Zendy; Je Won Kim | Zendy; Yong Chun Kim | Zendy; Seong-Ju Park | Zendy

Open Access

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO_2

Author(s) -

ChuYoung Cho,

Jin-Bock Lee,

SangJun Lee,

Sangheon Han,

TaeYoung Park,

Je Won Kim,

Yong Chun Kim,

Seong-Ju Park

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.001462

Subject(s) - light emitting diode , materials science , optoelectronics , diode , epitaxy , quantum efficiency , optics , dislocation , gallium nitride , layer (electronics) , physics , nanotechnology , composite material

We report on the improvement of light output power of InGaN/GaN blue light-emitting diodes (LEDs) by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO(2) mask. The light output power was increased by 80% at 20 mA of injection current compared with that of conventional LEDs without LEO structures. This improvement is attributed to an increased internal quantum efficiency by a significant reduction in threading dislocation and by an enhancement of light extraction efficiency by pyramidal-shaped SiO(2) LEO mask.

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