Open Access25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode
Author(s) -
HuiWen Chen,
Ying-Hao Kuo,
John E. Bowers
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.001070
Subject(s) - extinction ratio , materials science , optics , optical switch , crosstalk , electrode , silicon , voltage , optoelectronics , traveling wave , insertion loss , physics , wavelength , quantum mechanics , mathematical analysis , mathematics
We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB.
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