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We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa(1-x)N) nanorod arrays. The formation of InxGa(1-x)N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (&gt; 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa(1-x)N nanorods is due to the transfer of excitons to the localized states before the radiative decay.

Strong green photoluminescence from InxGa_1-xN/GaN nanorod arrays