Strong green photoluminescence from InxGa_1-xN/GaN nanorod arrays | Zendy

Chi-Chang Hong | Zendy; Hyeyoung Ahn | Zendy; Chen-Ying Wu | Zendy; Shangjr Gwo | Zendy

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Strong green photoluminescence from InxGa_1-xN/GaN nanorod arrays

Author(s) -

Chi-Chang Hong,

Hyeyoung Ahn,

Chen-Ying Wu,

Shangjr Gwo

Publication year - 2009

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.17.017227

Subject(s) - nanorod , photoluminescence , materials science , exciton , indium gallium nitride , optoelectronics , gallium nitride , heterojunction , indium , trapping , indium nitride , spontaneous emission , gallium , optics , nanotechnology , condensed matter physics , laser , physics , ecology , layer (electronics) , metallurgy , biology

We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa(1-x)N) nanorod arrays. The formation of InxGa(1-x)N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa(1-x)N nanorods is due to the transfer of excitons to the localized states before the radiative decay.

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