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Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration
Author(s) -
Aude-Reine Bellancourt,
Y. Barbarin,
D. J. H. C. Maas,
Mohammad Hossein Shafiei,
Martin Hoffmann,
M. Golling,
Thomas Südmeyer,
U. Keller
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.009704
Subject(s) - materials science , optics , fluence , optoelectronics , quantum dot , laser , ultrashort pulse , wafer , semiconductor , quantum dot laser , semiconductor laser theory , physics
Quantum dot (QD) semiconductor saturable absorber mirrors (SESAMs) offer a larger design freedom than standard quantum well (QW) SESAMs. QD density, QD growth conditions, number of QD-layers, and post-growth annealing were optimized to independently reduce the saturation fluence and adjust the modulation depth for an antiresonant SESAM that supported for the first time passive modelocking of a vertical external-cavity surface emitting laser (VECSEL) with the same spot size on gain and absorber. The same spot size is a requirement for the modelocked integrated external-cavity surface emitting laser (MIXSEL) concept which enables wafer-scale fabrication of the ultrafast semiconductor laser. The antiresonant SESAM design has low dispersion, is less susceptible to growth errors, and is therefore very promising for short pulse generation and MIXSEL integration.

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