Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals | Zendy

ChunFeng Lai | Zendy; Jim-Yong Chi | Zendy; HaoChung Kuo | Zendy; Hsi-Hsuan Yen | Zendy; Chia-En Lee | Zendy; Chia-Hsin Chao | Zendy; Han-Tsung Hsueh | Zendy; WenYung Yeh | Zendy

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Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals

Author(s) -

ChunFeng Lai,

Jim-Yong Chi,

HaoChung Kuo,

Hsi-Hsuan Yen,

Chia-En Lee,

Chia-Hsin Chao,

Han-Tsung Hsueh,

WenYung Yeh

Publication year - 2009

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.17.008795

Subject(s) - optics , photonic crystal , diode , light emitting diode , materials science , wavelength , optoelectronics , photon , collimated light , physics , laser

Far-field distributions of GaN-based photonic crystal (PhC) film-transferred light-emitting diodes (FT-LEDs) were investigated. The thickness of the device is about 840 nm. The emission wavelength is around 520 nm. The PhC region is a square lattice with a/lambda around 0.5. Angular-resolved measurements in the Gamma-X and Gamma-M directions were made in the polarized-resolved manner. Guided mode extraction behavior in agreement with the two-dimensional free-photon band calculation was observed. In addition, the pseudo-TM behavior for the non-collinearly coupled modes was observed. The azimuthal-mapping of the angular-resolved spectra revealed the evolution of the collinearly and the non-collinearly coupled modes. Furthermore, the light enhancement of approximately 2.7x and the collimation angle about 102.3 degrees were achieved.

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