Open Access42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide
Author(s) -
Laurent Vivien,
Johann Osmond,
Jean-Marc Fédéli,
Delphine MarrisMorini,
P. Crozat,
JeanFrançois Damlencourt,
Éric Cassan,
Y. Lecunff,
Suzanne Laval
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.006252
Subject(s) - responsivity , photodetector , optics , materials science , silicon on insulator , optoelectronics , germanium , wavelength , waveguide , dark current , bandwidth (computing) , silicon , detector , physics , telecommunications , computer science
A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 microm and a low dark current density of 60 mA/cm(2). At a wavelength of 1.52 microm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom