Near-resonant high order nonlinear absorption of ZnO thin films
Author(s) -
Yun-Pei Chan,
JaHon Lin,
Chih-Chang Hsu,
Wen–Feng Hsieh
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.019900
Subject(s) - femtosecond , materials science , exciton , absorption (acoustics) , sapphire , resonance (particle physics) , two photon absorption , thin film , laser , optics , optoelectronics , molecular beam epitaxy , nonlinear optics , excitation , attenuation coefficient , epitaxy , atomic physics , physics , nanotechnology , condensed matter physics , layer (electronics) , quantum mechanics , composite material
Nonlinear optical absorption of ZnO thin film grown by the laser molecular beam epitaxy was investigated by the Z-scan method using a frequency-doubled femtosecond Ti:sapphire laser. Due to near-exciton resonance, an enormous enhancement of two photon absorption (TPA) is about 3000 cm/GW at 390 nm which is about 6.5 times larger than the previously reported at two-photon exciton resonance in near-IR regime and 710 times larger than that of ZnO bulk measured at 532 nm. Besides, the free-carrier absorption resulting from linear absorption and TPA becomes essential when the excitation approaches the exciton resonance.
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