Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 μm light detection | Zendy

Yunlu Kang | Zendy; Moshe Zadka | Zendy; Stas Litski | Zendy; Gadi Sarid | Zendy; M. Morse | Zendy; Mario Paniccia | Zendy; Y.-H. Kuo | Zendy; John E. Bowers | Zendy; Andréas Beling | Zendy; H. -D. Liu | Zendy; Dion McIntosh | Zendy; Joe C. Campbell | Zendy; A. Pauchard | Zendy

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Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 μm light detection

Author(s) -

Yunlu Kang,

Moshe Zadka,

Stas Litski,

Gadi Sarid,

M. Morse,

Mario Paniccia,

Y.-H. Kuo,

John E. Bowers,

Andréas Beling,

H. -D. Liu,

Dion McIntosh,

Joe C. Campbell,

A. Pauchard

Publication year - 2008

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.16.009365

Subject(s) - responsivity , avalanche photodiode , photodiode , materials science , optoelectronics , epitaxy , optics , silicon , dark current , photodetector , detector , physics , layer (electronics) , composite material

We designed and fabricated Ge/Si avalanche photodiodes grown on silicon substrates. The mesa-type photodiodes exhibit a responsivity at 1310 nm of 0.54 A/W, a breakdown voltage thermal coefficient of 0.05%/ degrees C, a 3 dB-bandwidth of 10 GHz. The gain-bandwidth product was measured as 153 GHz. The effective k value extracted from the excess noise factor was 0.1.

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