Optically modulated internal strain in InGaN quantum dots grown on SiNx nano masks | Zendy

H. J. Chang | Zendy; T. T. Chen | Zendy; Linying Huang | Zendy; Y. F. Chen | Zendy; JangZern Tsai | Zendy; T. C. Wang | Zendy; HaoChung Kuo | Zendy

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Optically modulated internal strain in InGaN quantum dots grown on SiNx nano masks

Author(s) -

H. J. Chang,

T. T. Chen,

Linying Huang,

Y. F. Chen,

JangZern Tsai,

T. C. Wang,

HaoChung Kuo

Publication year - 2008

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.16.000920

Subject(s) - materials science , quantum dot , optoelectronics , refractive index , electric field , strain (injury) , semiconductor , optics , nitride , total internal reflection , nanotechnology , physics , medicine , quantum mechanics , layer (electronics)

Optically modulated internal strain has been observed in InGaN quantum dots (QDs) deposited on SiN(x) nano masks. The modulated internal strain can induce a number of intriguing effects, including the change of refractive index and the redshift of InGaN A(1)(LO) phonon. The underlying mechanism can be well accounted for in terms of the variation of internal strain through the converse piezoelectric effect arising from the screening of the internal electric field due to spatial separation of photoexcited electrons and holes. Our results point out a convenient way for the fine tuning of physical properties in nitride-based semiconductor nanostructures, which is very important for high quality optoelectronic devices.

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