Optical and electrical properties of Vanadium doped Indium oxide thin films | Zendy

Huibin Li | Zendy; Ning Wang | Zendy; Xingyuan Liu | Zendy

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Optical and electrical properties of Vanadium doped Indium oxide thin films

Author(s) -

Huibin Li,

Ning Wang,

Xingyuan Liu

Publication year - 2008

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.16.000194

Subject(s) - materials science , electroluminescence , oled , thin film , vanadium oxide , doping , electrical resistivity and conductivity , indium , anode , transmittance , oxide , optoelectronics , vanadium , indium tin oxide , optics , electrode , nanotechnology , chemistry , electrical engineering , physics , engineering , layer (electronics) , metallurgy

A new transparent conducting indium vanadium oxide (IVO) thin film is developed by using a modification-specific reactive thermal coevaporation method. Electrical and optical characteristics of IVO films were studied with different vanadium doping concentration, which shows good optical transmittance in the visible spectra range and a minimum electrical resistivity of 7.95 x 10(-4) Omega.cm corresponding to a carrier density of 2.28 x 10(20) cm(-3) and a Hall mobility of 34.5 cm(2) V(-1) s(-1), respectively. Using IVO film as the anode, OLED shows a reduced turn-on voltage and significantly enhanced luminance and electroluminescence efficiency with respect to the device with an ITO anode. Our results indicate that IVO is a promising transparent conducting oxide material, and a suitable electrical contact for hole injection in OLEDs.

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