PINIP based high-speed high-extinction ratio micron-size silicon electrooptic modulator | Zendy

Sasikanth Manipatruni | Zendy; Qianfan Xu | Zendy; Michal Lipson | Zendy

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PINIP based high-speed high-extinction ratio micron-size silicon electrooptic modulator

Author(s) -

Sasikanth Manipatruni,

Qianfan Xu,

Michal Lipson

Publication year - 2007

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.15.013035

Subject(s) - extinction ratio , resonator , optics , materials science , silicon , optoelectronics , dissipation , extinction (optical mineralogy) , physics , wavelength , thermodynamics

We propose an electrooptic device in silicon based on a p-i-n-i-p device structure for charge transport. The proposed device exhibits carrier injection time of 10 ps and extraction time of 15 ps enabling 100 GHz operation. When integrated into a resonator the proposed micron-size device operates at 40 Gb/s with 12 dB extinction ratio and 4fJ/bit/micron-length power dissipation, limited in speed only by the photon lifetime of the resonator.

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