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We propose an electrooptic device in silicon based on a p-i-n-i-p device structure for charge transport. The proposed device exhibits carrier injection time of 10 ps and extraction time of 15 ps enabling 100 GHz operation. When integrated into a resonator the proposed micron-size device operates at 40 Gb/s with 12 dB extinction ratio and 4fJ/bit/micron-length power dissipation, limited in speed only by the photon lifetime of the resonator.

PINIP based high-speed high-extinction ratio micron-size silicon electrooptic modulator