Near-infrared femtosecond laser crystallized poly-Si thin film transistors | Zendy

Yi-Chao Wang | Zendy; JiaMin Shieh | Zendy; HsiaoWen Zan | Zendy; CiLing Pan | Zendy

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Near-infrared femtosecond laser crystallized poly-Si thin film transistors

Author(s) -

Yi-Chao Wang,

JiaMin Shieh,

HsiaoWen Zan,

CiLing Pan

Publication year - 2007

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.15.006982

Subject(s) - materials science , thin film transistor , femtosecond , optoelectronics , annealing (glass) , laser , transistor , silicon , threshold voltage , thin film , infrared , polycrystalline silicon , optics , voltage , nanotechnology , electrical engineering , layer (electronics) , physics , engineering , composite material

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions.

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