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Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit
Author(s) -
Joris Van Campenhout,
Pédro Rojo Romeo,
Philippe Régreny,
Christian Seassal,
Dries Van Thourhout,
Steven Verstuyft,
L. Di Cioccio,
Jean-Marc Fédéli,
C. Lagahe,
Roel Baets
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.006744
Subject(s) - lasing threshold , materials science , silicon on insulator , optoelectronics , laser , photonic integrated circuit , silicon , nanophotonics , waveguide , optics , continuous wave , silicon photonics , photonics , physics , wavelength
A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically injected continuous-wave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabricated through heterogeneous integration of InP on silicon-on-insulator (SOI). The InP-based microdisk has a diameter of 7.5 mum and a thickness of 1 mum. A tunnel junction was incorporated to efficiently contact the p-side of the pn-junction. The laser emits at 1.6 mum, with a threshold current as low as 0.5 mA under continuous-wave operation at room temperature, and a threshold voltage of 1.65 V. The SOI-coupled laser slope efficiency was estimated to be 30 muW/mA, with a maximum unidirectional output power of 10 muW.

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