Diode-pumped Yb:GSO femtosecond laser | Zendy

Wenxue Li | Zendy; Qiang Hao | Zendy; Hui Zhai | Zendy; Heping Zeng | Zendy; Wei Lü | Zendy; Guangjun Zhao | Zendy; Lihe Zheng | Zendy; Liangbi Su | Zendy; Jun Xu | Zendy

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Diode-pumped Yb:GSO femtosecond laser

Author(s) -

Wenxue Li,

Qiang Hao,

Hui Zhai,

Heping Zeng,

Wei Lü,

Guangjun Zhao,

Lihe Zheng,

Liangbi Su,

Jun Xu

Publication year - 2007

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.15.002354

Subject(s) - optics , laser , materials science , femtosecond , mode locking , diode , injection seeder , laser diode , laser pumping , semiconductor laser theory , optoelectronics , physics

Compact femtosecond laser operation of Yb:Gd(2)SiO(5) (Yb:GSO) crystal was demonstrated under high-brightness diode-end-pumping. A semiconductor saturable absorption mirror was used to start passive mode-locking. Stable mode-locking could be realized near the emission bands around 1031, 1048, and 1088 nm, respectively. The mode-locked Yb:GSO laser could be tuned from one stable mode-locking band to another with adjustable pulse durations in the range 1~100 ps by slightly aligning laser cavity to allow laser oscillations at different central wavelengths. A pair of SF10 prisms was inserted into the laser cavity to compensate for the group velocity dispersion. The mode-locked pulses centered at 1031 nm were compressed to 343 fs under a typical operation situation with a maximum output power of 396 mW.

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