Imaging highly confined modes in sub-micron scale silicon waveguides using Transmission-based Near-field Scanning Optical Microscopy | Zendy

Jacob T. Robinson | Zendy; Stefan F. Preble | Zendy; Michal Lipson | Zendy

Open Access

Imaging highly confined modes in sub-micron scale silicon waveguides using Transmission-based Near-field Scanning Optical Microscopy

Author(s) -

Jacob T. Robinson,

Stefan F. Preble,

Michal Lipson

Publication year - 2006

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.14.010588

Subject(s) - near field scanning optical microscope , optics , materials science , microscopy , vibrational analysis with scanning probe microscopy , silicon on insulator , waveguide , silicon photonics , near and far field , silicon , scanning confocal electron microscopy , near field optics , optical microscope , photonics , optoelectronics , scanning electron microscope , physics

We demonstrate a new technique for high resolution imaging of near field profiles in highly confining photonic structures. This technique, Transmission-based Near-field Scanning Optical Microscopy (TraNSOM), measures changes in transmission through a waveguide resulting from near field perturbation by a scanning metallic probe. Using this technique we compare different mode polarizations and measure a transverse optical decay length of lambda/15 in sub-micron Silicon On Insulator (SOI) waveguides. These measurements compare well to theoretical results.

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