All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier | Zendy

Liqiang Guo | Zendy; Michael J. Connelly | Zendy

Open Access

All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier

Author(s) -

Liqiang Guo,

Michael J. Connelly

Publication year - 2006

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.14.002938

Subject(s) - extinction ratio , optical amplifier , optics , optoelectronics , materials science , semiconductor , wavelength , polarization (electrochemistry) , amplifier , nonlinear optics , optical rotation , physics , laser , chemistry , cmos

An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.

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