Anti-Stokes Raman conversion in silicon waveguides | Zendy

R. Claps | Zendy; Varun Raghunathan | Zendy; D. Dimitropoulos | Zendy; B. Jalali | Zendy

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Anti-Stokes Raman conversion in silicon waveguides

Author(s) -

R. Claps,

Varun Raghunathan,

D. Dimitropoulos,

B. Jalali

Publication year - 2003

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.11.002862

Subject(s) - raman scattering , energy conversion efficiency , optics , stokes shift , materials science , waveguide , raman spectroscopy , silicon , stokes parameters , photon , coherent anti stokes raman spectroscopy , dispersion (optics) , raman laser , laser , optoelectronics , scattering , physics , luminescence

The first observation of parametric down-conversion in silicon is reported. Conversion from 1542.3nm to 1328.8nm is achieved using a CW pump laser at 1427 nm. The conversion occurs via Coherent Anti-Stokes Raman Scattering (CARS) in which two pump photons and one Stokes photon couple through a zone-center optical phonon to an anti-Stokes photon. The maximum measured Stokes/anti-Stokes power conversion efficiency is 1x10-5. The value depends on the effective pump power, the Stimulated Raman Scattering (SRS) coefficient of bulk silicon, and waveguide dispersion. It is shown that the power conversion efficiency is a strong function of phase mismatch inside the waveguide.

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